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Pishow® D Series

8" Inductively Coupled Plasma - Deep Silicon Etching System

Inductively Coupled Plasma (ICP) - Deep Silicon (DSE)



System Features

  • The Pishow® D series is a ICP etching system for deep silicon etch
  • Bosch process for high aspect ratio trench etch
  • Optimized gas box design shortens the switching time between different processes to less than 1.0 s
  • The Pishow® D series, compatible with 8" to 4" wafers, is available in cluster and single chamber configurations

Product Series

Tebaank™ Pishow® D

Heverlee® Pishow® D

Haasrode® Pishow® D

Process Data

High Aspect Ratio, Excellent Depth Control, Steep Profile, Smooth Sidewall

Overview

Our proprietary Pishow® D deep reactive ion etching system is a deep silicon etch equipment for 8" to 6" IC fabs and R&D lines. It allows for precise control over etch depth while minimizing etching damage.

Deep reactive ion etch is a common practice during micro-/nano- device fabrication. The Pishow® D ICP-DRIE system is capable of the Bosch process to pattern high aspect ratio silicon features.

This system offers cost-effective solutions and has a small footprint, greatly enhances process throughput and production capacity.

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