Pishow® D Series

8" Inductively Coupled Plasma - Deep Reactive Ion Etching System

Inductively Coupled Plasma (ICP) - Deep Reactive Ion Etch (DRIE)



System Features

  • The Pishow® D series is a ICP etching system with DRIE applications
  • Offers silicon DRIE solutions and silicon carbide deep hole etching solutions
  • Optimized gas box design shortens the switching time between different processes to less than 1.0 s
  • Bosch process available for high aspect ratio trench or backside via etch
  • The Pishow® D series, compatible with 8" to 4" wafers, is available in cluster and single chamber configurations

Product Series

Hardware


Terbank™ Pishow® D Heverlee® Pishow® D Haasrode® Pishow® D
Loading Options Cassette Cassette Load lock
Wafer Size 200 mm ~ 100 mm 200 mm ~ 100 mm

200 mm ~ 100 mm

Carrier plate available for wafer pieces

Process Gases SF6, C4F8, O2, etc.
Critical Dimension ≥ 200 nm
Applicable Scenarios Fabs
  • Mass production
  • R&D lines
  • Small volume production
  • Research
Etching Materials Si, SiC
Applications

Deep silicon etch, Bosch Process, SiC backside via etch

Process Data

High Aspect Ratio, Excellent Depth Control, Steep Profile, Smooth Sidewall

Overview

Our proprietary Pishow® D deep reactive ion etching system is a deep silicon etch or silicon carbide via etch equipment for 200 mm to 100 mm IC fabs and R&D lines. It allows for precise control over etch depth while minimizing etching damage.

Deep reactive ion etch is a common practice during micro-/nano- device fabrication. The Pishow® D ICP-DRIE system is capable of the Bosch process to pattern high aspect ratio silicon features. It also offers DRIE processes for silicon carbide via etching.

This system offers cost-effective solutions and has a small footprint, greatly enhances process throughput and production capacity.

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