Pangea® Series

12" Ion Beam Etching System

Ion Beam Etch (IBE)



System Features

  • The Pangea® series is for 12" wafers, its large diameter ion source ensures great uniformity (1 σ non-uniformity < 1%)
  • The stage tilt angle is between -90° and +80°, so the ion beam can hit the sample surface at an angle
  • On-axis rotation of the wafer stage enhances process axisymmetry
  • The Pangea® series IBE chambers can be integrated into various cluster systems

Product Series

Process Data

MTJ Etching

Ta Etching

Overview

Ion beam etching is a dry etch technique. The core part of an IBE system is a large diameter ion source. Gases enter the discharge chamber of the ion source and become ionized into a uniform plasma. The cations in the plasma are accelerated by the grids of the ion source, and subsequently neutralized by the neutralizer. The ion beam formed gains kinetic energy in the process, bombarding the sample surface and removes surface materials through physical sputtering. As a result, patterns are etched onto the samples. This purely physical process is usually conducted in relatively high vacuum.

The core strength of IBE systems is that the beam energy and ion flux can be independently controlled, since the plasma is formed remotely, away from the sample. Besides, the wafer holder can be tilted, altering the direction of impact and creating slanted features.

Since the Pangea® IBE systems adopt purely physical etching processes, it can etch any solid, including but not limited to metals, alloys, oxides, compounds, hybrid materials, semiconductors, insulators, and superconductors.

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