Lorem® R Series

8" Reactive Ion Beam Etching System

Reactive Ion Beam Etch (RIBE)

System Features

  • The ESC of Lorem® R comes in 8-inch, 6-inch, or 4-inch options
  • Excellent non-uniformity (1 σ) of less than 3 %
  • The stage tilt angle to the beam is between -90° and +80°, so the ion beam can hit the sample surface at an angle
  • On-axis rotation of the wafer stage enhances process axisymmetry
  • Ion beam energy and ion flux can be independently controlled
  • High vacuum processes
  • Fast etch rate and high etch selectivity due to reactive process gases
  • The Lorem® R series comes in single-chamber and cluster configurations

Product Series

Process Data

Slanted Grating Etch with RIBE Process


The Lorem® R reactive ion beam etching (RIBE) system integrates reactive chemistry into the conventional IBE process, achieving higher etch rate and better selectivity to the mask. The wafer holder can be tilted, altering the direction of impact to control the sidewall slope. Since the beam energy and ion flux can be adjusted separately, the Lorem® R achieves better process control over pattern morphology. As a result of its special design, the Lorem® R offers etch solutions for unusual profiles and hard-to-process materials. Moreover, the Lorem® R has demonstrated world-class process capability for etching slanted and blazed gratings.