PiZeta™ Pangea™ R
Herent™ Pangea™ R
Slanted Grating Etch with RIBE Process
Compared to the purely physical processes of the
RIBE processes enjoy higher etch rate, and better etch selectivity. The wafer holder can be tilted, altering the direction of impact to control the sidewall slope. Since the beam energy and ion flux can be adjusted separately, the RIBE process can create features with flat trench bottoms.
The most significant application of the