Herent™ Chimera™ M

12" Metal Etching System

Inductively Coupled Plasma Etching (ICP) | Strip



System Features

  • The Herent™ Chimera™ M metal etching system is intended for volume production of 12" IC wafers
  • Consists of ICP etch chambers, strip chambers, and a central transfer platform
  • Suitable for aluminum pad applications from 0.13 μm to 14 nm technology nodes, and high-density aluminum interconnect

Overview

The Herent™ Chimera™ M system is suitable for 300 mm IC fabs. While designed specifically for back-end-of-line (BEOL) aluminum pad processes from 0.13 μm to 14 nm technology nodes, Herent™ Chimera™ M also has applications in BEOL high density aluminum interconnect processes. This system offers superior uniformity control and cost-effective solutions.

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