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Shale® C Series

8" Inductively Coupled Plasma Chemical Vapor Deposition System

Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)



System Features

  • Deposits high density films at low temperatures (< 120 °C). The density is comparable with films prepared by LPCVD at temperatures above 750 °C
  • Low leakage current, comparable with atomic layer deposition (ALD) processes
  • Offers gap filling processes for high aspect ratio structures
  • 8" or 6" ESC for different wafer sizes

Product Series

Tebaank™ Shale® C

Heverlee® Shale® C

Haasrode® Shale® C

Process Data

Density of SiO2 at 120 °C

Low Leakage Current

Microscale Filling Ability

Overview

The Shale® C series inductively coupled plasma chemical vapor deposition (ICP-CVD) systems form high density plasma through inductive coupling, and establishes the bias voltage through capacitive coupling. ICP-CVD film deposition process occurs at low temperatures, delivering high density, low damage, as well as great filling ability. The Shale® C series uses standard parts widely adopted by 8" IC fabs around the globe. The design is compliant with SEMI Standards.

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