Shale™ C Series

8" Inductively Coupled Plasma Chemical Vapor Deposition System

Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)

System Features

  • Deposits high density films at low temperatures (< 120 °C). The density is comparable with films prepared by LPCVD at temperatures above 750 °C
  • Offers low damage film deposition solutions, reducing the leakage current for high electron mobility transistor (HEMT) devices. The film quality is comparable with films prepared by atomic layer deposition (ALD) processes
  • Offers gap filling processes for high aspect ratio structures

Product Series


Module Standard Optional
Main System Silane-based
Transfer Module
  • Either single chamber,
  • or cluster (up to 4 process chambers)
RF Power Source

Source: 13.56 MHz

Bias: 13.56 MHz

Electrode Mechanical Clamps (60°C ~ 180°C) Electrostatic Chuck (ESC)
Gas Distribution Center / edge gas split
Vacuum System Dry pumps / vacuum gauges / throat valves
Process Gases SiH4, NH3, N2O, CF4, O2, N2, Ar

NF3, H2, He, CH4, etc.

Process Data

SiO2 SiNx
Wafer Size 200 mm ~ 50 mm (Carrier plate available for wafer pieces)
Optimal Deposition Depth 300 Å ~ 100 kÅ 100 Å ~ 10 kÅ
Deposition Rate 38 Å/s ~ 80 Å/s 5 Å/s ~ 40 Å/s
Non-uniformity (Range, 49-Point Sampling, Edge Exclusion: 5 mm) 8" < 3%
Refractive Index (RI) 1.46 ± 0.02 2.00 ± 0.05
Film Stress (Absolute Value) < 200 MPa < 500 MPa, can be increased to several GPa if necessary
Wet Etch Rate, BOE 7:1 @ 23°C 160 nm/min ~ 800 nm/min 1 nm/min ~ 20 nm/min


The Shale™ C series inductively coupled plasma chemical vapor deposition (ICP-CVD) systems form high density plasma through inductive coupling, and establishes the bias voltage through capacitive coupling. ICP-CVD film deposition process occurs at low temperatures, delivering high density, low damage, as well as great filling ability. The Shale™ C series uses standard parts widely adopted by 200 mm IC fabs around the globe. The design is compliant with SEMI Standards.