Shale® Series

8" Plasma Enhanced Chemical Vapor Deposition System

Plasma Enhanced Chemical Vapor Deposition (PECVD)



System Features

  • Offers depositions solutions based on silane (SiH4). Additionally, the Shale® T sub-series provides deposition solutions based on tetraethyl othosilicate (TEOS)
  • Offers a dual frequency system to freely tune the stress of silicon nitride films. The stress range is -1.6 GPa (compressive stress) to +0.7 GPa (tensile stress)
  • Offers n-type and p-type doping for processes involving doped oxide films, including phosphosilicate glass (PSG), borophosphosilicate glass (BPSG)

Product Series

Hardware

Module Standard Optional
Gas System Either silane-based or TEOS-based (in-situ doping available)
Transfer Module
  • Either single chamber,
  • or cluster (up to 3 process chambers)
RF Power Source 13.56 MHz 400 kHz
Heated Stage (Heater) Aluminum alloy (100°C ~ 400°C)
Gas Distrubution Two-stage gas distribution mechanism
Vacuum System Dry pumps / vacuum gauges / throat valves
Heater Spacing The electrode separation is adjustable in recipe settings
Process Gases (Silane-based) SiH4, NH3, N2O, CF4, O2, N2

NF3, Ar, C3H6, B2H6, PH3, CH4, GeH4, He, etc.

Process Gases (TEOS-based) TEOS, O2, He, CF4, N2

TMPi/TEPO, TMB, SiF4, N2O, NF3, Ar, etc.

Process Data


SiO2 SiNx
Wafer Size 200 mm ~ 50 mm (Carrier plate available for wafer pieces)
Optimal Deposition Depth 300 Å ~ 100 kÅ 100 Å ~ 10 kÅ
Deposition Rate 15 Å/s ~ 100 Å/s 5 Å/s ~ 50 Å/s
Non-uniformity (Range, 49-Point Sampling, Edge Exclusion: 5 mm) 8" < 3%
Refractive Index (RI) 1.46 ± 0.02 2.00 ± 0.05
Film Stress (Absolute Value) < 300 MPa < 500 MPa, can be increased to several GPa if necessary
Wet Etch Rate, BOE 7:1 @ 23°C 300 nm/min ~ 800 nm/min 1 nm/min ~ 20 nm/min

Wide Stress Tuning Range for Silicon Nitride

Overview

With the assistance of plasma generated through the discharge of parallel plate capacitors, the Shale® series PECVD systems can deposit thin films of silicon dioxide, silicon nitride, silicon oxynitrides, amorphous silicon, and other materials at temperatures not exceeding 400 °C. The films formed are of relatively high density and uniformity. The parts and components are of industrial standards for 300 mm or 200 mm fabs around the world, and the design is compliant with SEMI Standards.

circle-arrow2circle-arrow2facebookgooglehandshake2health2linkedinmenupdfplant2searchtwitteryoutube