Shale® A Series

8" Plasma Enhanced Chemical Vapor Deposition System

Plasma Enhanced Chemical Vapor Deposition (PECVD)

System Features

  • Offers depositions solutions based on silane (SiH4) or tetraethyl othosilicate (TEOS)
  • Offers a dual frequency system to freely tune the stress of silicon nitride films. The stress range is -1.6 GPa (compressive stress) to +0.7 GPa (tensile stress)
  • Offers n-type and p-type doping for processes involving doped oxide films, including phosphosilicate glass (PSG), borophosphosilicate glass (BPSG)
  • 8" and 6" compatible

Product Series

Process Data

Wide Stress Tuning Range for Silicon Nitride


With the assistance of plasma generated through the discharge of parallel plate capacitors, the Shale® A series PECVD systems can deposit thin films of silicon dioxide, TEOS, BPSG, silicon nitride, silicon oxynitride, amorphous silicon, amorphous carbon, amorphous silicon carbide, and other materials at temperatures not exceeding 400 °C. The films formed are of relatively high density and uniformity. The parts and components are of industrial standards for 8" fabs around the world, and the design is compliant with SEMI Standards.