Lorem™ Series

8" Ion Beam Etching System

Ion Beam Etch (IBE)



System Features

  • The Lorem™ series is for 8" to 4" wafers, and its standard size ion source delivers non-uniformity (1 σ) of less than 3%; with the optional large diameter ion source, this can be further lowered to less than 2%
  • The stage tilt angle is between -90° and +80°, so the ion beam can hit the sample surface at an angle
  • On-axis rotation of the wafer stage enhances process axisymmetry
  • The Lorem™ series comes in single-chamber and cluster configurations

Product Series

Hardware


Heverlee™ Lorem™ B Heverlee™ Lorem™ Haasrode™ Lorem™
Loading Options Cassette Load lock
Wafer Size 200 mm 200 mm ~ 100 mm
Process Gases Inert gases
Critical Dimension ≥ 20 nm
Ion Source Large diameter Standard size
Applicable Scenarios Fabs with high uniformity applications Fabs
  • Small scale production
  • R&D
Etching Materials
  • Dielectrics (SiO2, SiNX, etc.)
  • Materials with non-volatile byproducts (Pt, Au, Ag, Ir, NiFe, etc.)
  • Ferroelectric materials (PZT, SBT, etc.)
  • III-V and II-VI compound semiconductors (GaAs, GaN, InP, CdZnTe, etc.)
  • Other materials: sapphire, diamond, indium tin oxides, aluminum nitride, metal compounds, etc.
Applications

Magneto-resistive random access memories (MRAMs), magnetic head processing, MEMS, micro-LED, surface relief gratings, etc.

Process Data

MTJ Etching

Ta Etching

Overview

Ion beam etching is a dry etch technique. The core part of an IBE system is a large diameter ion source. Gases enter the discharge chamber of the ion source and become ionized into a uniform plasma. The cations in the plasma are accelerated by the grids of the ion source, and subsequently neutralized by the neutralizer. The ion beam formed gains kinetic energy in the process, bombarding the sample surface and removes surface materials through physical sputtering. As a result, patterns are etched onto the samples. This purely physical process is usually conducted in relatively high vacuum.

The core strength of IBE systems is that the beam energy and ion flux can be independently controlled, since the plasma is formed remotely, away from the sample. Besides, the wafer holder can be tilted, altering the direction of impact and creating slanted features.

Since the Lorem™ IBE systems adopt purely physical etching processes, it can etch any solid, including but not limited to metals, alloys, oxides, compounds, hybrid materials, semiconductors, insulators, and superconductors.

circle-arrow2circle-arrow2facebookgooglehandshake2health2linkedinmenupdfplant2searchtwitteryoutube