Pishow® Series

8" Inductively Coupled Plasma Etching System

Inductively Coupled Plasma (ICP)

System Features

  • Variety of applications, including silicon-based, magnetic, or metallic materials, as well as III-V and other compound semiconductors
  • Process temperature ranges from -100°C to +150°C
  • Better control of etch rate or uniformity with atomic layer etch (ALE) options
  • Bosch process available for high aspect ratio trench or deep hole etch
  • The Pishow® series, intended for samples up to 8" wafers, is available in cluster and single chamber configurations

Product Series


Terbank™ Pishow® Heverlee® Pishow® Haasrode® Pishow®
Loading Options Cassette Cassette Load lock
Wafer Size 200 mm ~ 100 mm 200 mm ~ 100 mm

200 mm ~ 100 mm

Carrier plate available for wafer pieces

Process Gases Fluorine-based, chlorine-based, oxygen, nitrogen, and inert gases
Critical Dimension ≥ 20 nm
Applicable Scenarios Fabs
  • Mass production
  • R&D lines
  • Small volume production
  • Research
Etching Materials
  • Metal compounds: Ti, TiN, Ta, TaN, TiOx, Mo, Al, W, WC
  • Gate materials (polysilicon, WSi, W, etc.)
  • Dielectrics (SiO2, SiNx, high-K and low-K materials)
  • Metals without volatile byproducts (Pt, Au, Ir, NiFe, etc.)
  • Ferroelectric materials (PZT, SBT, etc.)
  • Silicon (silicon, polysilicon, amorphous silicon, etc.)
  • III-V and II-VI compound semiconductors (GaAs, GaN, InP, CdZnTe, etc.)
  • Polymers and photoresists (polyimides, parylene, SU-8 photoresist, etc.)
  • Other materials: sapphire, diamond, lithium niobate, lithium tantalate, indium tin oxide, silicon carbide, aluminum nitride, etc.

Dry etch applications

  • Si, SiO2, SiNx, GaN, GaAs, InP, metals, and organic materials
  • Suitable for samples sensitive to chamber environments

Process Data


ICP etching is a plasma etching technique for processing micro-/nano-structures. It delivers fast etch rates, high etch selectivity, and excellent etch anisotropy with minimal plasma induced damage. Thanks to its superb uniformity, easy profile control, and great surface flatness, ICP is widely used to etch materials including Si, SiO2, SiNx, metals, and III-V compounds. ICP etching can be used to pattern various micro-/nano-structures for very large scale integration (VLSI), micro-electro-mechanical systems (MEMS), optical waveguides, and photo-electronic devices.