System Features
- Variety of applications, including silicon-based, magnetic, or metallic materials, as well as III-V and other compound semiconductors
- Process temperature ranges from -10°C to +150°C
- Better control of etch rate or uniformity with atomic layer etch (ALE) options
- Bosch process available for high aspect ratio trench or deep hole etch
-
The
Pishow® A series, intended for samples up to 8" wafers, is available in cluster and single chamber configurations
Product Series
Tebaank™ Pishow®
Heverlee® Pishow®
Haasrode® Pishow®
Process Data
InGaAs
InGaAsP
TiN
TiN
α-Si
α-Si
InP
InP
Overview
ICP etching is a plasma etching technique for processing micro-/nano-structures. It delivers fast etch rates, high etch selectivity, and excellent etch anisotropy with minimal plasma induced damage. Thanks to its superb uniformity, easy profile control, and great surface flatness, ICP is widely used to etch materials including Si, SiO2, SiNx, metals, and III-V compounds. ICP etching can be used to pattern various micro-/nano-structures for very large scale integration (VLSI), micro-electro-mechanical systems (MEMS), optical waveguides, and photo-electronic devices.