Haasrode™ Avior™

Capacitively Coupled Plasma Etching System

Capacitively Coupled Plasma (CCP)



System Features

  • Single Chamber CCP etching system
  • Suitable for photoresist descum applications and dielectric etch processes
  • Maximum wafer size: 6 inch (150 mm)

Hardware


Haasrode™ Avior™
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Wafer Size 150 mm ~ 50 mm
Gases Fluorine-based gases, oxygen, nitrogen, and inert gases
Critical Dimension ≥ 200nm
Frame Dimensions 1458 × 740 × 1264 mm
Applicable Scenarios
  • Research and small volume production
  • Customized low-cost options available
Etching Materials
  • Gate materials (poly-Si, Si, W, etc.)
  • Dielectrics (SiO2, SiNx, high-K and low-K materials)
  • Metals without volatile byproducts (Pt, Au, Ir, NiFe, etc.)
  • Ferroelectric materials (PZT, SBT, etc.)
  • Silicon (Si, poly-Si, a-Si, etc.)
  • III-V abd II-VI compound semiconductors (GaAs, GaN, InP, CdZnTe, etc.)
  • Polymers and photoresists (polyimides, parylene, SU-8 photoresist, etc.)
  • Other materials: sapphire, diamond, lithium niobate, lithium tantalate, indium tin oxide, aluminum nitride, etc.
Applications
  • Dry etch processes for various materials
  • Si, SiO2 and SiNx etching
  • Polyimide and parylene etching
  • Photoresist ashing
  • Failure analysis

Process Data

Overview

CCP is a common plasma etching technology for manufacturing micro-/nano-structures. During the reactive ion etch, large quantities of reactive species from the plasma will react with surface atoms, forming volatile products. The exhaust was then pumped out by a vacuum system. Haasrode™ Avior™ is a small footprint system, making it especially cost-effective. The system also provides solutions for etching a variety of materials.

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