|Wafer Size||150 mm ~ 50 mm|
|Gases||Fluorine-based gases, oxygen, nitrogen, and inert gases|
|Critical Dimension||≥ 200nm|
|Frame Dimensions||1458 × 740 × 1264 mm|
CCP is a common plasma etching technology for manufacturing micro-/nano-structures. During the reactive ion etch, large quantities of reactive species from the plasma will react with surface atoms, forming volatile products. The exhaust was then pumped out by a vacuum system.