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LMEC-300™

12" Special Metal Stack Etching Cluster

Reactive Ion Etch (RIE) | Ion Beam Etch (IBE) | Plasma Enhanced Chemical Vapor Deposition (PECVD)



System Features

  • The Chimera® N RIE chamber, Pangea® A IBE chamber, and Basalt® A PECVD chamber are all integrated into a cluster system
  • The LMEC-300™ system enables plasma etching, dry cleaning and in-situ passivation for materials with non-volatile etching byproducts, including magnetic tunnel junctions (MTJs), phase change alloys, metal-oxide-metal resistive stacks
  • Offers different solutions and processes for patterning magnetic random access memories (MRAMs), phase change random access memories (PCRAMs), resistive random access memories (ReRAMs), and magnetic sensors
  • Optional Chimera® A hardmask opening (HMOP) chamber, for all-in-one solution from HMOP to functioning layer etching
  • Suitable for 12" wafers

Process Data

Memory Device: MTJ Etching

Overview

The LMEC-300™ cluster integrates RIE, IBE and in-situ passivation for patterning key layers in emerging memory devices. Typical examples are MTJs of MRAMs, phase change alloys of PCRAMs, and resistive metal-oxide-metal stacks of ReRAMs. These stacks contain hard-to-process metals, with non-volatile byproducts re-depositing on the sidewalls. Combining RIE and IBE, the LMEC-300™ bypasses the re-deposition issue of RIE-only approaches, and further shrinks the feature size compared to IBE-only methods. The in-situ encapsulation module coats the devices with a protective layer after etching without vacuum break, which helps avoid device degradation due to exposure to the ambient environment. For emerging memory devices, the integrated approach of the LMEC-300™ offers the best process results on the market.

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